IRFZ24N TO220 IR MOSFET N Channel 17A 55V
Type Designator: IRFZ24N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 45 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 17 A
Tjⓘ – Maximum Junction Temperature: 175 °C
Qgⓘ – Total Gate Charge: 20(max) nC
trⓘ – Rise Time: 34 nS
Cossⓘ – Output Capacitance: 140 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.07 Ohm