Type Designator: IRFZ24N Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ – Maximum Power Dissipation: 45 W |Vds|ⓘ – Maximum Drain-Source Voltage: 55 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ – Maximum Drain Current: 17 A Tjⓘ – Maximum Junction Temperature: 175 °C Qgⓘ – Total Gate Charge: 20(max) nC trⓘ – Rise Time: 34 nS Cossⓘ – Output Capacitance: 140 pF Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.07 Ohm