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FQP34N20 Power MOSFET, N Channel, 200 V, 31 A, 0.06 ohm, TO-220, Through Hole

FQP34N20 Power MOSFET, N Channel, 200 V, 31 A, 0.06 ohm, TO-220, Through Hole
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FQP34N20 Power MOSFET, N Channel, 200 V, 31 A, 0.06 ohm, TO-220, Through Hole

€6.00

Product Weight: 0.0050KG

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Product Details

  • SKU : FR-1839004
  • Stock : Available

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ONSEMI FQP34N20  Power MOSFET, N Channel, 200 V, 31 A,

0.06 ohm, TO-220, Through Hole

 

The FQP34N20 is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

  • 100% avalanche tested
  • 60nC typical low gate charge
  • 55pF typical low Crss

 

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 31A
Drain Source Voltage Vds:  
Drain Source On State Resistance: 0.06ohm
On Resistance Rds(on): 0.06ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 5V
Power Dissipation Pd: 180W
Transistor Case Style: TO-220
Power Dissipation: 180W
No. of Pins: 3
Operating Temperature Max: 150°C

 

 

DataSheet :

ONSM-S-A0003585150-1.pdf

 

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FQP34N20 Power MOSFET, N Channel, 200 V, 31 A, 0.06 ohm, TO-220, Through Hole
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